MSF11N70 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – Simple Drive Requirement

MSF11N70
N-Channel 700V MOSFET
Description
The MSF11N70 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package available
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
700
V
V_GS
Gate-Source Voltage
±30
V
Continuous Drain Current @ TC=25°C
I_D
Continuous Drain Current @ TC=100°C
1.1
A
6.5
A
I_DM
Pulsed Drain Current
40
A
I_AR
Avalanche Current
10
A
E_AS
Single Pulsed Avalanche Energy
658
mJ
E_AR
Repetitive Avalanche Energy
17.8
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
Publication Order Number: [MSF11N70]
© Bruckewell Technology Corporation Rev. A -2014