MSF10N40 Datasheet, PDF (1/7 Pages) Bruckewell Technology LTD – 400V N-Channel MOSFET

MSF10N40
400V N-Channel MOSFET
Description
The MSF10N40 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V
• Extended Safe Operating Area
• Low gate charge (typ 30nC)
• 100% Avalanche Tested
• RoHS compliant package
Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
400
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
10.5
A
6.6
A
I_DM
Drain Current Pulsed
402
A
E_AS
Single Pulsed Avalanche Energy
378
mJ
I_AR
Avalanche Current
9.2
A
E_AR
Repetitive Avalanche Energy
13.9
mJ
Publication Order Number: [MSF10N40]
© Bruckewell Technology Corporation Rev. A -2014