MSE20N06N Datasheet, PDF (1/3 Pages) Bruckewell Technology LTD – Low RDS(on) trench technology

MSE20N06N
Dual N-Channel 20-V (D-S) MOSFET
FEATURES
• Low RDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
•Battery Powered Instruments
•Portable Computing
•Mobile Phones
•GPS Units and Media Players
Bruckewell Technology Corp., Ltd.
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature