MSD80N03 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

Preliminary MSD80N03
N-Channel Enhancement Mode Power MOSFET
Description
The MSD80N03 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-252
package is universally preferred for all
commercial-industrial applications
Features
• Low RDS(on) provides higher efficiency and extends
battery life
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V,
IL=40V, rated VDS=25V N-CH
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Packing & Order Information
Part No./ T：2,500/Reel
Part No./ R：80/Tube , 4,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
25
V
V_GS
Gate-Source Voltage
±20
V
Continuous Drain Current (TC=25°C)
I_D
Continuous Drain Current (TC=100°C)
80
A
50
A
I_DM
Pulsed Drain Current
36
A
Publication Order Number: [MSD80N03]
© Bruckewell Technology Corporation Rev. A -2014