MSD50N10 Datasheet, PDF (1/3 Pages) Bruckewell Technology LTD – N-Channel 100-V (D-S) MOSFET

Preliminary MSD50N10
N-Channel 100-V (D-S) MOSFET
Description
The MSD50N10 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-252
package is universally preferred for all
commercial-industrial applications
Features
• Low RDS(on) provides higher efficiency and extends
battery life
• Low thermal impedance copper lead frame DPAK
saves board space
• Fast switching speed
• High performance trench technology
• RoHS compliant package
Packing & Order Information
Part No./ T：2,500/Reel
Part No./ R：80/Tube , 4,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
100
V
V_GS
Gate-Source Voltage
±20
V
I_D
Continuous Drain Current (TC=25°C)
44
A
I_DM
Pulsed Drain Current
36
A
Publication Order Number: [MSD50N10]
© Bruckewell Technology Corporation Rev. A -2014