MSD50N03 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Logic Level Enhancement Mode Power MOSFET

Preliminary MSD50N03
N-Channel Logic Level Enhancement
Mode Power MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low rDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
• VDS=30V, ID=50A, RDS(ON)=9mΩ
• Low Gate Charge
• Repetitive Avalanche Rated
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Packing & Order Information
Part No./ T：2,500/Reel
Part No./ R：80/Tube , 4,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
30
V
V_GS
Gate-Source Voltage
±30
V
Continuous Drain Current @ TC=25°C
I_D
Continuous Drain Current @ TC=100°C
50
A
35
A
Publication Order Number: [MSD50N03]
© Bruckewell Technology Corporation Rev. A -2014