MSD4N70 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 700V N-Channel MOSFET

MSD4N70
700V N-Channel MOSFET
Description
The MSD4N70 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-252
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• 100% EAS Test
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge: 15 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 2.5 Ω (Typ.) @VGS=10V
• RoHS compliant package
Application
• Low power battery chargers
• Switch mode power supply (SMPS)
• DC-AC converters.
Packing & Order Information
Part No./ T：2,500/Tape&Reel
Part No./ R：80/Tube , 4,000/Box
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
700
V
V_GS
Gate-Source Voltage
±30
V
Continuous Drain Current (TC=25°C)
I_D
Continuous Drain Current (T_C=100°C)
3.6
A
2.3
A
Publication Order Number: [MSD4N70]
© Bruckewell Technology Corporation Rev. A -2014