MSD4N60 Datasheet, PDF (1/9 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET

MSD4N60 600V N-Channel MOSFET
GENERAL DESCRIPTION
The MSD4N60 is a N-channel enhancement-mode MOSFET , providing
the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness. The TO-252 package is
universally preferred for all commercial-industrial applications
FEATURES
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant / Halogen free package available
Symbol Parameter
V_DSS
Drain to Source Voltage
V_GS
Gate to Source Voltage
I_D
Continuous Drain Current(@T_C = 25 °C)
Continuous Drain Current(@T_C = 100 °C)
I_DM
Drain Current Pulsed
E_AS
Single Pulsed Avalanche Energy
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
T_L
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from
case for 10 seconds
TPKG
Maximum Temperature for Soldering @ Package Body for 10 seconds
P_D
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
T_STG
Operating Junction Temperature
T_J
Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C.
3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Value
600
±30
4.5
2.6
18
33
4.0
10
4.5
300
260
31
0.25
-55 ~ 150
150
Units
V
V
A
A
A
mJ
A
mJ
V/ns
°C
°C
W
W/°C
°C
°C
©Bruckewell Technology Corporation Rev. A -2012