MSD40P03 Datasheet, PDF (1/3 Pages) Bruckewell Technology LTD – P-Channel 30-V (D-S) MOSFET

Preliminary MSD40P03
P-Channel 30-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low rDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
• Low rDS(on) provides higher efficiency and
• Extends battery life
• Low thermal impedance copper lead frame
• TO-252 saves board space
• Fast switching speed
• High performance trench technology
• RoHS compliant package
Packing & Order Information
Part No./ T：2,500/Reel
Part No./ R：80/Tube , 4,000/Box
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
-30
V
V_GS
Gate-Source Voltage
±25
V
I_D
Continuous Drain Current @ TC=25°C
41
A
I_DM*1
Pulsed Drain Current
±40
A
I_S
Continuous Source Current (Diode Conduction)
-30
A
Publication Order Number: [MSD40P03]
© Bruckewell Technology Corporation Rev. A -2014