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MSD39N60 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs | |||
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MSD39N60
30V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
⢠30V, 90A, RDS(ON) =2.6mΩ@VGS = 10V
⢠Improved dv/dt capability
⢠Fast switching
⢠100% EAS Guaranteed
⢠RoHS compliant package
Applications
⢠MB / VGA / Vcore
⢠POL Applications
⢠SMPS 2nd SR
Packing & Order Information
Shippingï¼80/Tube ; 2,500/Box
TO-252 Package
Graphic symbol
Publication Order Number: [MSD39N60]
© Bruckewell Technology Corporation Rev. A -2016
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