MSD36N12 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs

MSD36N12
30V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 30V, 23A, RDS(ON) =30mΩ@VGS = 4.5V
• Improved dv/dt capability
• Fast switching
• Green Device Available
• RoHS compliant package
Applications
• Notebook
• Load Switch
• LED applications
Packing & Order Information
80/Tube ; 2,500/Box
TO-252 Package
Graphic symbol
Publication Order Number: [MSD36N12]
© Bruckewell Technology Corporation Rev. A -2016