MSD2N70 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 700V N-Channel MOSFET

MSD2N70
700V N-Channel MOSFET
Description
The MSD2N70 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-252
package is universally preferred for all
commercial-industrial applications
Features
• 100% EAS Test
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge: 10.5 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
Part No./ T：2,500/Reel
Part No./ R：80/Tube , 4,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
700
V
V_GS
Gate-Source Voltage
±30
V
Continuous Drain Current @ TC=25°C
I_D
Continuous Drain Current @ TC=70°C
1.6
A
1.0
A
I_DM
Pulsed Drain Current
6
A
Publication Order Number: [MSD2N70]
© Bruckewell Technology Corporation Rev. A -2014