MSD09N66 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 100V N-Channel MOSFETs

MSD09N66
100V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 100V, 45A, RDS(ON) =18mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available
• RoHS compliant package
Applications
• Networking
• Load Switch
• LED applications
Packing & Order Information
Shipping850/Tube ; 2,500/Box
TO-252 Pin Configuration
Graphic symbol
Publication Order Number: [MSD09N66]
© Bruckewell Technology Corporation Rev. A -2014