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MSC49N02X Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 40V N-Channel MOSFETs | |||
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MSC49N02X
40V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
⢠40V,140A, RDS(ON) =2.2mΩ@VGS = 10V
⢠Improved dv/dt capability
⢠Fast switching
⢠Green Device Available
⢠RoHS compliant package
Applications
⢠PowerTools
⢠Load Switch
⢠LED applications
⢠Motor Drive Applications
PPAK5X6 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID
IDM
EAS
Drain Current - Continuous (TC=25°C) (Chip Limitation)
Drain Current - Continuous (TC=100°C) (Chip Limitation)
Drain Current - Pulsed1
Single Pulse Avalanche Energy2
140
A
88
A
560
A
360
mJ
Publication Order Number: [MSC49N02X]
© Bruckewell Technology Corporation Rev. A -2016
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