MSC09N74X Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 100V N-Channel MOSFETs

MSC09N74X
100V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 100V, 70A , RDS(ON) =6.5mΩ @VGS = 10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available
• RoHS compliant package
Applications
• Networking
• Load Switch
• LED applications
• Quick Charger
Packing & Order Information
Shipping：3,000/Reel
PPAK5X6 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
100
V
V_GS
Gate-Source Voltage
±20/-12
V
I_D
Drain Current - Continuous (T_C=25°C)
Drain Current - Continuous (T_C=100°C)
I_DM
Drain Current - Pulsed¹
70
A
44
A
280
A
Publication Order Number: [MSC09N74X]
© Bruckewell Technology Corporation Rev. A -2014