MS9N90 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

MS9N90
900V N-Channel MOSFET
Description
The MS9N90 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• R_DS(on) (Max 1.4 Ω )@V_GS=10V
• Gate Charge (Typical 47nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current -Pulsed
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
dV/dt
Peak Diode Recovery dV/dt
Power Dissipation (TC=25°C)
P_D
- Derate above 25C
T_J/T_STG
Operating Junction and Storage Temperature
Value
900
±30
9
6
36
900
28
4.0
280
2.22
-55 to +150
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014