MS90N10 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 100V N-Channel MOSFET

MS90N10 100V N-Channel MOSFET
GENERAL DESCRIPTION
The MS90N10 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness. The
TO-220 package is universally preferred for all
commercial-industrial applications
FEATURES
• Low On Resistance
PRODUCT SUMMARY
• Low Thermal Impendence
VDS (V)
rDS(on) (mΩ)
ID(A)
• Fast Switching Speed
• RoHS compliant / Halogen free package
7 @ VGS = 10V
100
90A
9 @ VGS = 4.5V
available
APPLICATION
•White LED boost converters
•Automotive Systems
•Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
100
V
VGS
±20
Continuous Drain Current a
Pulsed Drain Current b
TA=25°C
ID
90
A
IDM
360
Continuous Source Current (Diode Conduction) a
IS
90
A
Power Dissipation a
TA=25°C
PD
300
W
Operating Junction and Storage Temperature
Range
TJ, Tstg
-55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
RθJA
Maximum Junction-to-Case
RθJC
Maximum
62.5
1
Units
°C/W
©Bruckewell Technology Corporation Rev. A -2013