MS8N50 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MS8N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS8N50 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=550V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Ballast
• Inverter
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
500
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
8.0
A
4.8
A
I_DM
Drain Current Pulsed
32
A
I_AR
Avalanche Current
8.0
V
E_AS
Single Pulsed Avalanche Energy
290
mJ
E_AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.5
mJ
3.5
V/ns
• Drain current limited by maximum junction temperature
Publication Order Number: [MS8N50]
© Bruckewell Technology Corporation Rev. A -2014