MS85N06 Datasheet, PDF (1/3 Pages) Bruckewell Technology LTD – Improved dv/dt Capability, High Ruggedness

MS85N06
60V N-Channel MOSFET
FEATURES
¾
3%4 PO
.BY

Ƹ
!7(47

¾
(BUF
$IBSHF
5ZQJDBM
O$

¾
*NQSPWFE
EWEU
$BQBCJMJUZ
)JHI
3VHHFEOFTT

¾

"WBMBODIF
5FTUFE

¾
.BYJNVN
+VODUJPO
5FNQFSBUVSF
3BOHF
Ę$

Preliminary Data Sheet
Bruckewell Technology Corp., Ltd.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
d_v/d_t
P_D
Drain-Source Voltage
Drain Current -Continuous (T_C=25Ċ)
Drain Current -Continuous (T_C=100Ċ)
Drain Current -Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C=25Ċ)
- Derate above 25Ċ
T_J,T_STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
T_L
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Value
60
85
60
340
±20
929
17.6
7.0
176
1.17
–55 to + 175
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/Ċ
Ċ

Ċ