MS7N80 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MS7N80
800V N-Channel MOSFET
Description
The MS7N80 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge : 37nC (Typ.)
• Extended Safe Operating Area
• Lower R_DS(ON) : 1.70 Ω (Typ.) @V_GS=10V
• 100% Avalanche Tested
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
800
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
7.0
A
4.2
A
I_DM
Drain Current Pulsed
26.5
A
E_AS
Single Pulsed Avalanche Energy
580
mJ
E_AR
Repetitive Avalanche Energy
16.8
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
Publication Order Number: [MS7N80]
© Bruckewell Technology Corporation Rev. A -2014