MS7N60 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MS7N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS7N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
600
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
7.0
A
4.4
A
I_DM
Drain Current Pulsed
28
A
I_AR
Avalanche Current
E_AS
Single Pulsed Avalanche Energy
7.0
V
187
mJ
E_AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
7.0
mJ
4.4
V/ns
• Drain current limited by maximum junction temperature
Publication Order Number: [MS7N60]
© Bruckewell Technology Corporation Rev. A -2014