MS75N075 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – Improved dv/dt Capability, High Ruggedness

MS75N75
75V N-Channel MOSFET
Features
• RDS(on) (Max 0.017 Ω )@VGS=10V
• Gate Charge (Typical 85nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (175°C)
• RoHS compliant package
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DSS
Drain-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current –Pulsed
V_GS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
P_D
Power Dissipation (TC=25°C) - Derate above 25°C
T_J/T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
●Drain current limited by maximum junction temperature
Value
75
75
52.5
300
±20
1350
9
7.0
190
1.27
-55 to +150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Publication Order Number: [MS75N75]
© Bruckewell Technology Corporation Rev. A -2014