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MS70N03 Datasheet, PDF (1/5 Pages) Bruckewell Technology LTD – P-Channel 30-V (D-S) MOSFET
MS70N03
P-Channel 30-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low rDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
• RoHS compliant package
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Packing & Order Information
Part No./ T:2,500/Tape&Reel
Part No./ R:80/Tube , 4,000/Box
Graphic symbol
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Currenta (TA =25°C)
IDM
Pulsed Drain Currentb
IS
Continuous Source Current (Diode Conduction)a
75
A
300
A
30
A
Publication Order Number: [MS70N03]
© Bruckewell Technology Corporation Rev. A -2014