MS6N95 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – 950V N-Channel MOSFET

MS6N95
950V N-Channel MOSFET
Description
The MS6N95 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (Max 2.4 Ω )@VGS=10V
• Gate Charge (Typical 33nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
950
V
I_D
Drain Current -Continuous (TC=25°C)
6
A
Drain Current -Continuous (TC=100°C)
3.8
A
I_DM
Drain Current –Pulsed
V_GS
Gate-Source Voltage
24
A
±30
V
E_AS
Single Pulsed Avalanche Energy
650
mJ
E_AR
Repetitive Avalanche Energy
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
Publication Order Number: [MS6N95]
© Bruckewell Technology Corporation Rev. A -2014