MS6N90 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

MS6N90
900V N-Channel MOSFET
Description
The MS6N90 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (Max 2.4 Ω )@VGS=10V
• Gate Charge (Typical 33nC)
• Excellent Switching Characteristics
• Improved dv/dt Capability, High
• Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature
• Range (150°˚C)
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
800
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
36
A
4.2
A
I_DM
Drain Current –Pulsed
28
A
V_GS
Gate-Source Voltage
±30
V
E_AS
Single Pulsed Avalanche Energy
580
mJ
E_AR
Repetitive Avalanche Energy
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
• Drain current limited by maximum junction temperature
Publication Order Number: [MS6N90]
© Bruckewell Technology Corporation Rev. A -2014