MS6N80 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MS6N80
800V N-Channel MOSFET
Description
The MS6N80 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge : 37nC (Typ.)
• Extended Safe Operating Area
• RoHS compliant package
Application
•• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DSS
Drain-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current –Pulsed
V_GS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
P_D
Power Dissipation (TC=25°C) - Derate above 25°C
Value
800
36
4.2
28
±30
580
16.7
5.5
156
1.25
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
Publication Order Number: [MS6N80]
© Bruckewell Technology Corporation Rev. A -2014