MS69P05 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 60V P-Channel MOSFETs

MS69P05
60V P-Channel MOSFETs
Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• -60V,-20A, RDS(ON) =48mΩ@VGS = -10V
• Improved dv/dt capability
• Green Device Available
• 100% EAS Guaranteed
• Fast Switching
• RoHS compliant package
Application
• Motor Drive
• Power Tools
• LED Lighting
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Continuous Drain Current (TC=25°C)
I_D
Continuous Drain Current (TC=100°C)
I_DM
Drain Current Pulsed
E_AS
Single Pulsed Avalanche Energy²
I_AS
Single Pulsed Avalanche Current²
Power Dissipation (TC = 25°C)
P_D
Power Dissipation – Derate above 25°C
Value
-60
±20
-20
-13
-80
51
-32
46
0.37
Unit
V
V
A
A
mJ
A
W
W/°C
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016