MS67C10 Datasheet, PDF (1/7 Pages) Bruckewell Technology LTD – Green Device Available

MS67C10
N & P Channel 60-V Dual MOSFETs
Description
These N+P dual Channel enhancement mode power
field effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficiency
fast switching applications.
Features
• Fast switching
• Green Device Available
• Suit for 4.5V Gate Drive Applications
Applications
• DC Fan
• Motor Drive Applications
• Networking
• Half / Full Bridge Topology
Packing & Order Information
3,000/Reel
SO-8 Package information
Graphic symbol
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014