MS60P02NE Datasheet, PDF (1/3 Pages) Bruckewell Technology LTD – P-Channel 60-V (D-S) MOSFET

Preliminary MS60P02NE
P-Channel 60-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low rDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
• Low rDS(on) provides higher efficiency and extends
battery life
• Low thermal impedance copper leadframe
• SOT-23 saves board space
• Fast switching speed
• High performance trench technology
Packing & Order Information
3,000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (T_A=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
-60
V
V_GS
Gate-Source Voltage
±20
V
I_D
Continuous Drain Current^a @ T_A=25°C
Continuous Drain Current^a @ T_A=70°C
I_DM
Pulsed Drain Current^b
I_S
Continuous Source Current (Diode Conduction) ^a
Power Dissipation^a (T_A =25°C)
P_D
Power Dissipation^a (T_A =70°C)
1.7
A
1.4
A
±15
A
-1.7
A
1.3
W
0.8
W
T_J/T_STG
Operating Junction and Storage Temperature
-55 to +150
°C
Publication Order Number: [MS60P02NE]
© Bruckewell Technology Corporation Rev. A -2014