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MS5N60 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET | |||
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MS5N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS5N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
⢠BVDSS=650V typically @ Tj=150°C
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant package
Application
⢠Open Framed Power Supply
⢠Adapter
⢠STB
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
Drain to Source Voltage
600
V
VGS
Gate to Source Voltage
±30
V
ID
IDM
EAS
EAR
IAR
dv/dt
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Peak Diode Recovery dv/dt
4.5
A
2.6
18
A
58.6
mJ
10
mJ
4.5
A
4.5
V/ns
⢠Drain current limited by maximum junction temperature
Publication Order Number: [MS5N60]
© Bruckewell Technology Corporation Rev. A -2014
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