MS5N50-A Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MS5N50-A
N-Channel Enhancement Mode Power MOSFET
Description
The MS5N50-A is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=550V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS & Halogen free compliant package
Application
• Ballast
• Inverter
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V_DSS
V_G
Drain to Source Voltage
Gate to Source Voltage
500
V
±30
V
Continuous Drain Current (TC=25°C)
I_D
Continuous Drain Current (TC=100°C)
I_DM
Drain Current Pulsed
5
A
3.2
20
A
E_AS
Single Pulsed Avalanche Energy
305
mJ
E_AR
Repetitive Avalanche Energy
10.1
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
• Drain current limited by maximum junction temperature
Publication Order Number: [MS5N50-A]
© Bruckewell Technology Corporation Rev. A -2014