MS50N06 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MS50N06
N-Channel Enhancement Mode Power MOSFET
Description
The MS50N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
• E-bike Charger
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
60
V
V_GS
Gate-Source Voltage
±20
V
Continuous Drain Current @ TC=25°C
I_D
Continuous Drain Current @ TC=100°C
50
A
35
A
I_DM*1
Pulsed Drain Current
200
A
I_AS
Avalanche Current
50
A
E_AS
Avalanche Energy
500
mJ
Publication Order Number: [MS50N06]
© Bruckewell Technology Corporation Rev. A -2014