MS4N65 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – Low On Resistance

MS4N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS4N65 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=650V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DSS
Drain to Source Voltage
650
V
V_GS
Gate to Source Voltage
±30
V
Continuous Drain Current (TC=25°C)
I_D
Continuous Drain Current (TC=100°C)
I_DM
Drain Current Pulsed
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
3.6
A
2.3
16.4
A
240
mJ
10
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
• Drain current limited by maximum junction temperature
Publication Order Number: [MS4N65]
© Bruckewell Technology Corporation Rev. A -2014