MS40N06 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – Advanced high cell density Trench technology

MS40N06 60V N-Channel MOSFET
GENERAL DESCRIPTION
The MS40N06 is the highest performance trench N-ch MOSFETs with
extreme high cell density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter applications .
The QM6006M6 meet the RoHS and Green Product requirement , 100%
EAS guaranteed with full function reliability approved.
FEATURES
• Advanced high cell density Trench technology
• Super Low Gate Charge
• Excellent CdV/dt effect decline
• 100% EAS Guaranteed
• Green Device Available
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
IAS
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient ¹
Thermal Resistance Junction-Case1
Rating
60
±20
40
25
7.4
6
80
67
Typ.
---
---
28
59
2
-55 to 150
-55 to 150
Max.
62
2.1
Units
V
V
A
A
A
A
A
m
J
A
W
W
℃
℃
Unit
℃/W
℃/W
©Bruckewell Technology Corporation Rev. A -2014