MS3N80 Datasheet, PDF (1/7 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MS3N80
800V N-Channel MOSFET
Description
The M3N80 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications.
Features
• RDS(on) (Max 2.4 Ω )@VGS=10V
• Gate Charge (Typical 15.0nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DSS
Drain-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current –Pulsed
V_GS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
E_AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
P_D
Power Dissipation (TC=25°C) - Derate above 25°C
T_J/T_STG
Operating and Storage Temperature Range
Value
800
3
1.8
12
±30
336
10.7
4.0
107
0.85
-55 to +150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
Publication Order Number: [MS3N80]
© Bruckewell Technology Corporation Rev. A -2014