MS34P07 Datasheet, PDF (1/5 Pages) Bruckewell Technology LTD – Low thermal impedance

P-Channel 20-V (D-S) MOSFET
MS34P07
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Battery Powered Instruments
• Portable Computing
• Mobile Phones
• GPS Units and Media Players
VDS (V)
-20
PRODUCT SUMMARY
r_DS(on) (mΩ)
34 @ V_GS = -4.5V
48 @ V_GS = -2.5V
ID(A)
-5
-3
TSOP6
Drain: 1,2,5,6 Gate: 3
Source: 4
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
V_GS
±12
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
T_A=25°C
T_A=100°C
I_D
I_DM
I_S
T_A=25°C
P_D
-5
-3.3
-20
-1
1.40
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
R_θJA
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1