MS23P19Z Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 20V P-Channel MOSFETs

MS23P19Z
20V P-Channel MOSFETs
Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• -20V,-250mA, RDS(ON) =650mΩ@VGS = -4.5V
• Improved dv/dt capability
• Fast switching
• Green Device Available
• Suit for -1.5V Gate Drive Applications
• RoHS compliant package
Application
• Notebook
• Load Switch
• Battery Protection
• Hand-held Instruments
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
Publication Order Number: [MS23P19Z]
© Bruckewell Technology Corporation Rev. A -2014