MS23P01S Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – P-Channel Enhancement Mode Power MOSFET

MS23P01S
P-Channel Enhancement Mode Power MOSFET
Description
The MS23P01S uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
General Features
● V_DS = -20V,I_D = -2.6A
R_DS(ON) < 160mΩ @ V_GS=-2.5V
R_DS(ON) < 120mΩ @ V_GS=-4.5V
D
G
S
Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● PWM applications
● Load switch
SC70-3/ SOT-323 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A1SHB
MS23P01S
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current -Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-20
±12
-2.6
-13
0.9
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
138
℃/W
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=-20V,V_GS=0V
Min Typ Max Unit
-20
-
V
-
-
-1
μA
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