MS23N22 Datasheet, PDF (1/5 Pages) Bruckewell Technology LTD – P-Channel 30-V (D-S) MOSFET

MS23N22
P-Channel 30-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low rDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
• Low rDS(on) provides higher efficiency and extends
battery life
• Low thermal impedance copper lead frame SOT-23
saves board space
• Fast switching speed
• High performance trench technology
• RoHS compliant package
Packing & Order Information
3,000/Reel
Graphic symbol
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Continuous Drain Current^a (T_A =25°C)
Continuous Drain Current_a (T_A =70°C)
I_DM
Pulsed Drain Current^b
I_S
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a (T_A =25°C)
P_D
Power Dissipation^a (T_A =70°C)
T_J/T_STG
Operating Junction and Storage Temperature
• Drain current limited by maximum junction temperature
Value
Unit
30
V
±20
V
2.5
A
2
A
10
A
0.46
A
1.25
W
0.8
W
-55 to +150
°C
Publication Order Number: [MS23N22]
© Bruckewell Technology Corporation Rev. A -2014