MS23N20Z Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel 20V (D-S) MOSFET

MSD23N20
N-Channel 20V (D-S) MOSFET
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for 1.5V Gate Drive Applications
Packing & Order Information
SOT-323, 3,000/Reel
Graphic symbol
Publication Order Number: [MS23N20
©Bruckewell Technology Corporation Rev. A -2014