MS18N50 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 500V N-channel MOSFET

MS18N50
500V N-channel MOSFET
Description
The MS18N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• 100% EAS Test
• Extended Safe Operating Area
• RoHS compliant package
Application
• High current, High speed switching
• PFC (Power Factor Correction)
• SMPS (Switched Mode Power Supplies)
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
500
V
±30
V
18
A
10.8
A
I_DM
Drain Current -Pulsed
72
A
E_AS
Single Pulsed Avalanche Energy
990
mJ
E_AR
Repetitive Avalanche Energy
23.5
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
T_J, Tstg
Operating Junction and Storage Temperature
-55~+150
°C
Power Dissipation (TC=25°C)
P_D
Power Dissipation (TC=100°C)
238
W
1.8
W
• Drain current limited by maximum junction temperature
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014