|
MS15N50 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET | |||
|
MS15N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant package
Application
⢠Power Factor Correction
⢠Flat Panel Power
⢠Full and Half Bridge Power Supplies
⢠Two-Transistor Forward Power Supplies
Graphic symbol
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
500
V
±30
V
15
A
9
A
IDM
Drain Current -Pulsed
60
A
IAR
Avalanche Current
15
A
EAS
Single Pulsed Avalanche Energy
750
mJ
EAR
Repetitive Avalanche Energy
25
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
TJ
Storage Temperature
150
°C
⢠Drain current limited by maximum junction temperature
Publication Order Number: [MS15N50]
© Bruckewell Technology Corporation Rev. A -2014
|
▷ |