MS14N60 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

MS14N60
900V N-Channel MOSFET
Description
The MS14N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current -Pulsed
I_AR
Avalanche Current
E_AS
Single Pulsed Avalanche Energy
E_AR
dV/dt
Repetitive Avalanche Energy
Peak Diode Recovery dV/dt
T_J
Storage Temperature
Power Dissipation (TC=25°C)
P_D
Derate above 25C
• Drain current limited by maximum junction temperature
Value
600
±30
14
8.4
56
14
53
16
4.5
150
60
0.35
Unit
V
V
A
A
A
A
mJ
mJ
V/ns
°C
W
W/°C
Publication Order Number: [MS14N60]
© Bruckewell Technology Corporation Rev. A -2014