MS13N50 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 500V N-Channel MOSFET

MS13N50
500V N-Channel MOSFET
Description
The MS13N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• 100% EAS Test
• Extended Safe Operating Area
• RoHS compliant package
Application
• Electronic lamp ballasts
• based on half bridge topology
• PFC (Power Factor Correction)
• SMPS (Switched Mode Power Supplies)
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current –Pulsed
E_AS
Avalanche Energy
E_AR
Repetitive Avalanche Energy
Power Dissipation (TC=25°C)
P_D
Power Dissipation (TC=100°C)
Value
500
±30
13
8
52
803
19.5
195
1.56
Unit
V
V
A
A
A
mJ
mJ
W
W/°C
Publication Order Number: [MS13N50]
© Bruckewell Technology Corporation Rev. A -2014