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| MS12N65 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET | |||
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MS12N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS12N65 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
⢠Low gate charge ( typical 52nC)
⢠High ruggedness
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠RoHS compliant package
Application
⢠Power Factor Correction
⢠LCD TV Power
⢠Full and Half Bridge Power
Graphic symbol
Packing Information
Shippingï¼50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
12
A
7.4
A
IDM
Pulsed Drain Current
48
A
EAS
Single Pulsed Avalanche Energy
865
mJ
EAR
Repetitive Avalanche Energy
23.1
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
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