MS12N60 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MS12N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS12N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=6600V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Ballast
• Inverter
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box x
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V_DSS
Drain-Source Voltage
600
V
V_GS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
12
A
7.2
A
I_DM
Pulsed Drain Current
48
A
E_AS
Single Pulsed Avalanche Energy
870
mJ
E_AR
Repetitive Avalanche Energy
22.5
mJ
I_AR
dV/dt
Avalanche Current
Peak Diode Recovery dV/dt
12.0
A
3.5
V/ns
• Drain current limited by maximum junction temperature
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014