MS10N65 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

MS10N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS10N65 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=700V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
650
V
±30
V
9.5
A
6.0
A
I_DM
Pulsed Drain Current
38
A
E_AS
Single Pulsed Avalanche Energy
700
mJ
E_AR
Repetitive Avalanche Energy
15.6
mJ
dV/dt
Peak Diode Recovery dV/dt
5.5
V/ns
• Drain current limited by maximum junction temperature
Publication Order Number: [MS10N65]
© Bruckewell Technology Corporation Rev. A -2014