MS10N60 Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET

MS10N60
600V N-Channel MOSFET
General Description
The MS13N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Packing Information
Shipping：50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
I_D
Drain Current -Continuous (TC=100°C)
I_DM
Drain Current –Pulsed
E_AS
Avalanche Energy
E_AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dV/dt
Power Dissipation (TC=25°C)
P_D
Power Dissipation (TC=100°C)
T_J/T_STG
Operating Junction and Storage Temperature
Value
600
±30
9.5
5.7
38
700
15.6
4.5
50
0.38
-55 to +150
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
Publication Order Number: [MS10N60]
© Bruckewell Technology Corporation Rev. A -2014