MB120S Datasheet, PDF (1/1 Pages) Bruckewell Technology LTD – SURFACE MOUNT HIGH DENSITY 1 AMP SILICON

SURFACE MOUNT HIGH DENSITY 1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
MB120S
FEATURES
• Low forward voltage (0.76V TYP @ 1.0A)
• Low leakage current (0.2μA TYP @ 200V)
• High current rating: 1.0A
• High voltage rating: 200V
APPLICATIONS:
• Input rectification for LED lighting
• Power over Ethernet (PoE) peripherals
• General purpose full wave rectification
MECHANICAL DATA
Case: MBS
Epoxy: UL94V-O rate flame retardant
Lead: Lead Formed for Surface Mount
Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current Total device
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Operating junction temperature range
Storage temperature range
Preliminary
Bruckewell Technology Corp., Ltd.
Symbol
MB120S
Unit
VRRM
200
V
VRWM
140
V
VDC
200
V
IF(AV)
1
A
IFSM
30
A
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
Electrical characteristics (Tc=25°C unless otherwise noted)
Parameter
Maximun instantaneous
at IF=1A, Tj=25°C
Maximum reverse current
Tj=25°C
at working peak reverse voltage Tj=125°C
Symbol
VF
IR
Thermal characteristics (Tc=25°C unless otherwise noted)
Parameter
Symbol
Typical thermal resistance
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RθJA
Rthjl
TYP
0.75
0.2
-
85
28
Max Unit
0.90
V
50
u'A
20
m'A
Unit
°C/W