DMS05N60 Datasheet, PDF (1/3 Pages) Bruckewell Technology LTD – N-Channel Depletion-Mode MOSFET

DMS05N60 N-Channel Depletion-Mode MOSFET
FEATURES
• Depletion Mode (Normally On)
• Advanced Planar Technology
• Rugged Poly-silicon Gate Cell Structure
• Fast Switching Speed
• RoHS Compliant/Lead Free
• ESD Sensitive
Applications
• Normally-on Switches
BV_DSX
600V
R_DS(ON) (Max.)
700Ω
• SMPS start-up Circuit
• Linear Amplifier
• Converters
• Constant Current Source
• Telecom
I_DSS,min
12mA
Absolute Maximum Ratings T_A=25℃ unless otherwise specified
Symbol
Parameter
DMS05N60
Unit
V_DSX
V_DGX
Drain-to-Source Voltage ^[1]
Drain-to-Gate Voltage ^[1]
600
V
600
V
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current
0.020
A
0.081
P_D
Power Dissipation
0.50
W
V_GS
Gate-to-Source Voltage
±20
V
T_L
T_J and T_STG
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
Operating and Storage Temperature Range
300
℃
-55~150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings “may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction-to-Ambient
DMS05N60
Unit
250
K/W
©Bruckewell Technology Corporation Rev. A -2012